ELECTRICAL CHARACTERISTICS OF AL CONTACT TO NISI USING THIN W LAYER AS A BARRIERBARTUR M; NICOLET MA.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 39; NO 10; PP. 822-824; BIBL. 13 REF.Article

ALUMINIUM CONTACT TO NICKEL SILICIDE USING A THIN TUNGSTEN BARRIERBARTUR M; NICOLET MA.1982; THIN SOLID FILMS; ISSN 0040-6090; CHE; DA. 1982; VOL. 91; NO 2; PP. 89-98; BIBL. 13 REF.Article

THERMAL OXIDATION OF NICKEL DISILICIDEBARTUR M; NICOLET MA.1982; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1982; VOL. 40; NO 2; PP. 175-177; BIBL. 23 REF.Article

Utilization of NiSi₂ as an interconnect material for VLSIBARTUR, M; NICOLET, M.-A.IEEE electron device letters. 1984, Vol 5, Num 3, pp 88-90, issn 0741-3106Article

Marker experiments for diffusion in the silicide during oxidation of PdSi, Pd₂Si, CoSi₂, and NiSi₂ films on <Si>BARTUR, M; NICOLET, M.-A.Journal of applied physics. 1983, Vol 54, Num 9, pp 5404-5415, issn 0021-8979Article

Self-confined metallic interconnects for very large scale integrationBARTUR, M; NICOLET, M.-A.Applied physics letters. 1984, Vol 44, Num 2, pp 263-264, issn 0003-6951Article

Thermal oxidation of transition metal silicides on Si: summaryBARTUR, M; NICOLET, M.-A.Journal of the Electrochemical Society. 1984, Vol 131, Num 2, pp 371-375, issn 0013-4651Article

Chromium as a diffusion Barrier between NiSi, Pd₂Si, or PtSi and AlBARTUR, M; NICOLET, M.-A.Journal of the Electrochemical Society. 1984, Vol 131, Num 5, pp 1118-1122, issn 0013-4651Conference Paper

Properties of SiO₂ grown on Ti, Co, Ni, Pd, and Pt silicidesBARTUR, M; NICOLET, M.-A.Journal of electronic materials. 1984, Vol 13, Num 1, pp 81-94, issn 0361-5235Article

Silicon Schottky barriers and p-n junctions with highly stable aluminum contact metallizationHALPERIN, L. E; BARTUR, M; KOLAWA, E et al.IEEE electron device letters. 1991, Vol 12, Num 6, pp 309-311, issn 0741-3106, 3 p.Article

Anodic oxide films on CrSi₂BARCZ, A. J; BARTUR, M; BANWELL, T et al.Journal of the Electrochemical Society. 1985, Vol 132, Num 10, pp 2312-2316, issn 0013-4651Article

Schottky barrier height of sputtered TiN contacts on siliconFINETTI, M; SUNI, I; BARTUR, M et al.Solid-state electronics. 1984, Vol 27, Num 7, pp 617-623, issn 0038-1101Article